Resonant interaction between localized and extended vibrational modes in Si: 18O under pressure.

The interaction between localized and extended vibrational modes in solids is of central importance in understanding how local vibrational modes decay into phonons. Interstitial oxygen (O(i)) in silicon is a model system for studying such interactions. Using hydrostatic pressure, we have brought the antisymmetric stretch mode of (18)O(i) in silicon into resonance with the second harmonic of the (18)O(i) resonant mode. Infrared spectroscopy was used to observe an anticrossing between these two vibrational modes at pressures near 4 GPa. A model of the interaction between these modes produced excellent agreement with the experimentally observed frequencies and linewidths.